Document Type

Article

Rights

This item is available under a Creative Commons License for non-commercial use only

Disciplines

1.4 CHEMICAL SCIENCES

Publication Details

Journal of Solid State Electrochemistry 18 March, 2019

Abstract

A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. This device also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.

DOI

https://doi.org/10.1007/s10008-019-04239-z

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Chemistry Commons

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