Document Type
Article
Rights
Available under a Creative Commons Attribution Non-Commercial Share Alike 4.0 International Licence
Abstract
Low-k materials such as silicon dioxide (SiO2) play an important role in the semiconductor industry. Plasma has become indispensable for advanced materials processing. In this work a treatment of SiO2single crystal by direct current plasma discharge is studied in detail. Offline metrology is conducted for silicon dioxide wafers by Raman scattering, energy-dispersive x-ray spectroscopy, and ellipsometry. Broad Raman peak at around 2800 cm−1 is observed for the treatedSiO2 wafers. Effects of plasma treatment on position of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etch rate sensors, which might be of importance in managing plasma etching processes.
DOI
https://doi.org/10.1063/1.3543838
Recommended Citation
D. Popovic, et al., (2011) Raman scattering analysis of silicon dioxide single crystal treated by direct current plasma discharge. Applied Physics Letters 98/5, 051503 (2011) DOI http://dx.doi.org/10.1063/1.3543838
Included in
Atomic, Molecular and Optical Physics Commons, Condensed Matter Physics Commons, Plasma and Beam Physics Commons
Publication Details
Applied Physics Letters 98, 051503 (2011); http://dx.doi.org/10.1063/1.3543838