Document Type

Article

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This item is available under a Creative Commons License for non-commercial use only

Publication Details

In IEEE Journal of Quantum Electronics, Sept. 1985, Vol.21, issue 9, pp.1505-1512. Available from http://0-ieeexplore.ieee.org.ditlib.dit.ie/search/srchabstract.jsp?arnumber=1072829&isnumber=23086&punumber=3&k2dockey=1072829@ieeejrns&query=((dublin+institute+of+technology)%3Cin%3Emetadata)&pos=1&access=no

Abstract

Recently, McInerney, Reekie, and Bradley observed bistability in twin diode GaAs/GaAlAs injection lasers in an external cavity when both diodes were above threshold. We show that this bistability may be explained by a form of self-focusing which is produced by induced waveguiding in the wide stripe lasers. A detailed analysis is performed on a standard model of these diodes in an external cavity. We have found very good agreement between theory and experiment.

DOI

10.1109/JQE.1985.1072829

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