Document Type

Article

Rights

This item is available under a Creative Commons License for non-commercial use only

Disciplines

Electrical and electronic engineering

Publication Details

Moore, C., Perova, T.S.,Kennedy, B., Berwick, K., Shaganov, I., More, R.A.: Study of Structure and Quality of Different Silicon Oxides using FTIR and Raman Microscopy, Proceedings of SPIE, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, Galway, Ireland, 05 September, Thomas J. Glynn, 4876, 2003, pp 1247-1256

doi:10.1117/12.464024

http://dx.doi.org/10.1117/12.464024

Abstract

In this work, SiO2 and fluorine and phosphorous doped SiO2 thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are therefore discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their structure and water content. The porosity is calculated for these samples. Finally, micro-Raman spectroscopy is used to measure the fluorine content in a device structure.

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