Document Type

Article

Rights

This item is available under a Creative Commons License for non-commercial use only

Disciplines

Electrical and electronic engineering

Publication Details

Materials Science and Engineering: B, Volume 73, Number 1, 3 April 2000 , pp. 168-172.

DOI: http://dx.doi.org/10.1016/S0921-5107(99)00454-7

Abstract

proximity rapid thermal diffusion (RTD). A compressive stress was found on the whole silicon wafer after 15 s RTD. After 165 s RTD, the distribution of the stress across the wafer was found to be different: compressive at the edge and tensile at the middle. Thermal stress was relieved in the RTD wafers via slip dislocations. These slip dislocations were observed in the product wafers using optical microscopy. Slip lines propagated from the wafer edge to the wafer centre in eight preferred positions of maximum induced stress. The thermally induced stress and the slip dislocation density increased with time spent at the RTD peak temperature.

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