Document Type

Article

Rights

This item is available under a Creative Commons License for non-commercial use only

Disciplines

Electrical and electronic engineering

Publication Details

Physics Review B., Vol.73, 7, 2006

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DOI:10.1103/PhysRevB.73.075322

Abstract

The built-in strain and composition of as-grown and Si-capped single layers of Ge∕Si dots grown at various temperatures (460–800 °C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700–800 °C the observations are in agreement with a model of the Ge∕Si dot consisting of a Si-rich boundary region and a Ge-rich core.

DOI

10.1103/PhysRevB.73.075322

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